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| Product Bulletin OPB815L July 1997 Deep Gap Slotted Optical Switch Type OPB815L Features *Non-contact switching *Printed circuit board mounting *0.375" (9.53 mm) wide slot *0.430" (10.92 mm) deep slot Description The OPB815L consists of an infrared emitting diode and an NPN silicon phototransistor mounted in a low cost plastic housing on opposite sides of a 0.375" (9.53 mm) wide, 0.430" (10.92 mm) deep slot. Phototransistor switching takes place whenever an opaque object passes through the slot. Available with wire leads as OPB815W. Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage and Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -40o C to +85o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240o C(1) Input Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Output Phototransistor Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering. (2) Derate linearly 1.67 mW/o C above 25o C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) All parameters tested using pulse technique. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 12-80 (972) 323-2200 Fax (972) 323-2396 Type OPB815L Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR V(BR)CEO V(BR)ECO ICEO PARAMETER Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Emitter Saturation Voltage On-State Collector Current MIN MAX UNITS 1.70 100 30 5.0 100 V A V V nA IF = 20 mA VR = 2.0 V TEST CONDITIONS Output Phototransistor IC = 1.00 mA IE = 100 A VCE = 10.0 V, IF = 0, Ee = 0 IC = 500 A, IF = 20 mA VCE = 10.0 V, IF = 20 mA Coupled VCE(SAT) IC(ON) 0.40 3.5 16.0 V mA Typical Performance Curves Collector Current vs LED Drive Typical IF - mA Normalized IC(ON) vs Distance (X Axis Blocked) Normalized IC(ON) vs Distance (Y Axis Blocked) Typical Typical Distance - inches Distance - inches Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 12-81 |
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